LiNbO3 ferroelectric properties on high-and moderate-doped Si substrates

Journal of the Korean Physical Society

Volumn 42, Issue SUPPL., 2003, Pages

  Jung, Soon Won ^a   Kim, Yong Seong ^a   Jeong, Sang Hyun ^a   In, Yong Il ^a   Kim, Kwang Ho ^a   No, Kwangsoo ^b  

^a Chongju University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Fatigue; Ferroelectric property; LiNbO3 thin film on high and moderate doped Si; Retain; Switching time

Indexed keywords

EID: 12944272918     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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