1.1 eV deep level in 4H-SiC

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1999, Pages 283-286

  Mitchel, W C ^a   Perrin, R ^a   Goldstein, J ^a   Roth, M ^a   Smith, S R ^a   Solomon, J S ^a   Evwaraye, A O ^a   Hobgood, H M ^a   Augustine, G ^a   Balakrishna, V ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; BAND STRUCTURE; CARRIER MOBILITY; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; HALL EFFECT; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; VANADIUM;

DEEP LEVEL; OPTICAL ADMITTANCE SPECTROSCOPY; TEMPERATURE DEPENDENT HALL EFFECT;

SILICON CARBIDE;

EID: 0032598496     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (14)