Aluminum-ion implantation into 4H-SiC (11-20) and (0001)

Materials Research Society Symposium Proceedings

Volumn 815, Issue , 2004, Pages 217-222

  Negoro, Y ^a   Kimoto, T ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; DIFFUSION; DOPING (ADDITIVES); DOSIMETRY; EPITAXIAL GROWTH; HALL EFFECT; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; MORPHOLOGY; REACTIVE ION ETCHING; SURFACE PROPERTIES;

HALL MOBILITY; HOLE CONCENTRATION; ROOM TEMPERATURE (RT); TEMPERATURE DEPENDENCE;

SILICON CARBIDE;

EID: 12844283447     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-815-j5.2     Document Type: Conference Paper

References (10)

1. J.W. Palmour, L. A. Lipkin, R. Singh, D. B. Slater, A. V. Suvorov, and C. H. Carter, Diamond and Related Materials, 6, 1400 (1997).
2. K. Tone and J. H. Zhao, IEEE Trans. Electron Devices, 46, 612 (1999).
3. H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano, and Y. Sugawara, IEEE Electron Device Lett., 20, 611 (2002).
4. F. Schmid, M. Laube, G. Pensl, G. Wagner, and M. Maier, J. Appl. Phys., 91, 9182 (2002).
5. Y. Negoro, N. Miyamoto, T. Kimoto, and H. Matsunami, Appl. Phys. Lett., 80, 240 (2002).
6. M. Satoh, Y. Nakaike, and T. Nakamura, J. Appl. Phys., 89, 1986 (2001).
7. Y. Negoro, K. Katsumoto, T. Kimoto, and H. Matsunami, Mater. Sci. Forum, (2004) (in press).
8. T. Troffer, M. Schadt, T. Frank, H. Itho, G. Pensl, J. Heindl, H. P. Strunk, and M. Maier, phys. stat. sol. (a), 162, 217 (1997).
9. H. Tanaka, S. Tanimoto, M. Yamanaka, and M. Hoshi, Mater. Sci. Forum, 389-393, 803 (2002).
10. N. T. Son, P. N. Hai, W. M. Chen, C. Hallin, B. Monemar, and E. Janzén, Physical Review B 61, 10554 (2000).