Sensitivity of Bragg surface diffraction to analyze ion-implanted semiconductors

Applied Physics Letters

Volumn 71, Issue 18, 1997, Pages 2614-2616

  Hayashi, M A ^a   Morelhao S L ^a,c,d   Avanci, L H ^a   Cardoso, L P ^a   Sasaki, J M ^a,e   Kretly, L C ^a   Chang, S L ^b  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

^d UNIVERSITY OF SÃO PAULO   (Brazil)

^e FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

COHERENT LIGHT; CRYSTAL DEFECTS; CRYSTAL LATTICES; ION IMPLANTATION; PHOTOSENSITIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES;

BRAGG SURFACE DIFFRACTION; GRAZING INCIDENCE X RAY DIFFRACTION;

X RAY DIFFRACTION ANALYSIS;

EID: 0031551592     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120157     Document Type: Article

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