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Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 220-224

Mapping of Bragg-surface diffraction of InP/GaAs(1 0 0) structure

(7) Avanci, L H a Hayashi, M A a Cardoso, L P a Morelhao S L b Riesz, F c Rakennus, K d Hakkarainen, T d,e

a UNIVERSITY OF CAMPINAS (Brazil)

b LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON (Brazil)

c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

d TAMPERE UNIVERSITY OF TECHNOLOGY (Finland)

e VTT TECHNICAL RESEARCH CENTRE OF FINLAND (Finland)

Author keywords

Bragg surface diffraction; GSMBE; III V compounds; X ray multiple diffraction

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

BRAGG SURFACE DIFFRACTION; GAS SOURCE MOLECULAR BEAM EPITAXY; X RAY MULTIPLE DIFFRACTION;

HETEROJUNCTIONS;

EID: 0032095486 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00074-8 Document Type: Article

Times cited : (16)

References (11)

1
- 0029358897
- S.L. Morelhão, L.H. Avanci, L.P. Cardoso, F. Riesz, K. Rakennus, T. Hakkarainen, Vacuum 46 (9/10) (1995) 1013.
- (1995) Vacuum , vol.46 , Issue.9-10 , pp. 1013
- Morelhão, S.L.¹ Avanci, L.H.² Cardoso, L.P.³ Riesz, F.⁴ Rakennus, K.⁵ Hakkarainen, T.⁶

2
- 0031103154
- J.M. Sasaki, L.P. Cardoso, C. Campos, K.J. Roberts, G.F. Clark, E. Pantos, M.A. Sacilotti, J. Crystal Growth 172 (1997) 284.
- (1997) J. Crystal Growth , vol.172 , pp. 284
- Sasaki, J.M.¹ Cardoso, L.P.² Campos, C.³ Roberts, K.J.⁴ Clark, G.F.⁵ Pantos, E.⁶ Sacilotti, M.A.⁷

3
- 34250923960
- M. Renninger, Z. Kristallogr. 106 (1937) 141.
- (1937) Z. Kristallogr. , vol.106 , pp. 141
- Renninger, M.¹

4
- 0000919431
- S.L. Morelhão, L.P. Cardoso, J. Appl. Phys. 73 (9) (1993) 4218.
- (1993) J. Appl. Phys. , vol.73 , Issue.9 , pp. 4218
- Morelhão, S.L.¹ Cardoso, L.P.²

5
- 0027701372
- S.L. Morelhão, L.P. Cardoso, Solid State Commun. 88 (6) (1993) 465.
- (1993) Solid State Commun. , vol.88 , Issue.6 , pp. 465
- Morelhão, S.L.¹ Cardoso, L.P.²

6
- 0038741665
- S.L. Morelhão, L.P. Cardoso, Mat. Res. Soc. Symp. Proc. 262 (1992) 175.
- (1992) Mat. Res. Soc. Symp. Proc. , vol.262 , pp. 175
- Morelhão, S.L.¹ Cardoso, L.P.²

7
- 0005738601
- S.L. Morelhão, L.P. Cardoso, J. Appl. Crystallogr. 29 (1996) 446.
- (1996) J. Appl. Crystallogr. , vol.29 , pp. 446
- Morelhão, S.L.¹ Cardoso, L.P.²

8
- 84951227426
- J.M. Sasaki, A.P. Pereira, S.L. Morelhão, C.E.M. Oliveira, L.P. Cardoso, Rev. Fís. Apl. Instrum. 6 (2) (1991) 78.
- (1991) Rev. Fís. Apl. Instrum. , vol.6 , Issue.2 , pp. 78
- Sasaki, J.M.¹ Pereira, A.P.² Morelhão, S.L.³ Oliveira, C.E.M.⁴ Cardoso, L.P.⁵

9
- 0026237218
- F. Riesz, K. Lischka, K. Rakennus, T. Hakkarainen, A. Pesek, J. Crystal Growth 114 (1991) 127.
- (1991) J. Crystal Growth , vol.114 , pp. 127
- Riesz, F.¹ Lischka, K.² Rakennus, K.³ Hakkarainen, T.⁴ Pesek, A.⁵

10
- 0346339158
- Tampere, Finland, April Paper Fo4
- K. Rakennus, T. Hakkarainen, K. Tappura, M. Pessa, Proc. 6th European Conf. on MBE and Related Growth Methods, Tampere, Finland, April 1991, Paper Fo4.
- (1991) Proc. 6th European Conf. on MBE and Related Growth Methods
- Rakennus, K.¹ Hakkarainen, T.² Tappura, K.³ Pessa, M.⁴

11
- 0005144633
- F. Riesz, K. Rakennus, T. Hakkarainen, M. Pessa, J. Vac. Sci. Technol. B 9 (1991) 176.
- (1991) J. Vac. Sci. Technol. B , vol.9 , pp. 176
- Riesz, F.¹ Rakennus, K.² Hakkarainen, T.³ Pessa, M.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.