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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7826-7830

Transient capacitance in metal-oxide-semiconductor structures with stacked gate dielectrics

(5) Goto, Masakazu a Higuchi, Keiichi a Toril, Kazuyoshi b Hasunuma, Ryu a Yamabe, Kikuo a

a UNIVERSITY OF TSUKUBA (Japan)

b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

Author keywords

Detrap; High k dieectrics; Leakage current; MOS; Transient capacitance; Trap

Indexed keywords

CAPACITANCE; CHARGED PARTICLES; DIELECTRIC MATERIALS; ELECTRON TRAPS; HAFNIUM COMPOUNDS; METAL INSULATOR BOUNDARIES; MOSFET DEVICES; PHOTOLITHOGRAPHY; RELAXATION PROCESSES; TRANSIENTS;

DETRAP; HIGH-K DIELECTRICS; TRANSIENT CAPACITANCE; TRAP;

MOS DEVICES;

EID: 12844272801 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.7826 Document Type: Conference Paper

Times cited : (2)

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