Si/SiO 2 interface attack during metal oxide growth under low oxygen pressure

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 307-311

  Kubo, K ^a   Kiyohara, M ^a   Shimoyama, K ^a   Yamabe, K ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

BaTiO 3; Concavity; Interface; Si; Silicide; SiO 2

Indexed keywords

BARIUM COMPOUNDS; DIFFUSION; MOLECULAR BEAM EPITAXY; PRESSURE EFFECTS; SILICA; THIN FILMS;

CONCAVITY;

SURFACE CHEMISTRY;

EID: 0038684493     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00442-2     Document Type: Conference Paper

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