The effect of doping concentration and conductivity type on preferential etching of 4H-SiC by molten KOH

Materials Research Society Symposium Proceedings

Volumn 815, Issue , 2004, Pages 139-143

  Gao, Ying ^b   Zhang, Zehong ^a   Bondokov, Robert ^a   Soloviev, Stanislav ^a   Sudarshan, Tangali ^a  

^a The Department of Mechanical Engineering   (United States)

^b Bandgap Technologies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); ELECTROCHEMISTRY; ETCHING; MOLTEN MATERIALS; SEMICONDUCTOR DOPING; SILICON WAFERS; THERMAL DIFFUSION; THERMOANALYSIS;

DOPING CONCENTRATION; ETCH PIT DENSITY; THREADING EDGE DISLOCATION; THREADING SCREW;

SILICON CARBIDE;

EID: 12844269388     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-815-j5.20     Document Type: Conference Paper

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