Surface morphology and electric conductivity of epitaxial Cu(100) films grown on H-terminated Si(100)

Journal of Applied Physics

Volumn 79, Issue 9, 1996, Pages 6865-6871

  Krastev, E T ^a   Voice, L D ^a   Tobin, R G ^a,b  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b TUFTS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; METALLIC FILMS; MORPHOLOGY; SCATTERING; SEMICONDUCTING SILICON; SURFACES; THICKNESS MEASUREMENT; X RAY CRYSTALLOGRAPHY;

EFFECTIVE CONDUCTIVITY; FILM THICKNESS; SILICIDE FORMATION; THERMAL EVAPORATION;

COPPER;

EID: 0030151795     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361508     Document Type: Article

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