Tunneling current through ultra-thin silicon dioxide films formed by controlling preoxide in heating-up

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 110-113

  Morita, S ^a   Okazaki, T ^a   Nishimura, K ^a   Urabe, S ^a   Morita, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); METALS; MOS DEVICES; MOSFET DEVICES; RECONFIGURABLE HARDWARE; SILICA; SILICON WAFERS; ULTRATHIN FILMS;

DIELECTRIC CHARACTERISTICS; DIELECTRIC PERFORMANCE; GATE OXIDE THICKNESS; INSULATING PERFORMANCE; LARGE SCALE INTEGRATION CHIPS; SILICON DIOXIDE FILM; ULTRA THIN GATE OXIDE; ULTRATHIN SILICON DIOXIDE;

OXIDE FILMS;

EID: 84954121094     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967556     Document Type: Conference Paper

References (8)

1. M. Morite, T. Ohmi, Mat. Res. Soc. Symp. Proc. 259, 1992, p. 19
2. 2 Interface 2, eds. C. R. Helms and B. E. Deal (Plenum, New York, 1993) p.199
3. M. Morite, T. Ohmi, Jpn. J. Appl. Phys. 33 (1994) 370.
4. M. Offenberg, M. Liehr, G.W. Rubloff and K. Holloway, Appl. Phys. Lett. 57 (1990) 1254.
5. M. Offenberg, M. Liehr and G.W. Rubloff, J. Vac. Sci. & Techol. 9 (1991) 1058.
6. K.Makihara, A. Terakawa, M. Y. Kwon, M. Morite and T. Ohmi, Jpn. J. Appl. Phys. 32 (1993) 294.
7. K. Nishimura, S. Urabe, M. Morita, Proceedings of the 9th International Conference on Production Engineering, Osaka, 1999, p. 421.
8. T. Ohmi, J. Electrochem. Soc. 143, 2957 (1996).