|
Volumn 38, Issue 2, 2005, Pages 319-327
|
SiGe/Si layers-early stages of plastic relaxation
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING;
ATOMIC FORCE MICROSCOPY;
CHEMICAL VAPOR DEPOSITION;
COMPUTER SIMULATION;
DISLOCATIONS (CRYSTALS);
NUCLEATION;
PROBABILITY;
SILICON WAFERS;
TRANSMISSION ELECTRON MICROSCOPY;
LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);
PLASTIC RELAXATION;
STRAINED SILICON;
X-RAY TOPOGRAPHY (XRT);
SEMICONDUCTING SILICON COMPOUNDS;
|
EID: 12844260749
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/38/2/017 Document Type: Conference Paper |
Times cited : (4)
|
References (21)
|