Nucleation, glide velocity and blocking of misfit dislocations in SiGe/Si

Crystal Research and Technology

Volumn 33, Issue 4, 1998, Pages 593-604

  Kohler R ^a   Pfeiffer, J U ^a   Raidt, H ^a   Neumann, W ^a   Zaumseil, P ^b   Richter, U ^c,d  

^a HUMBOLDT UNIVERSITY   (Germany)

^b IHP   (Germany)

^c Labour F Elektronenmikrosekopie N   (Germany)

^d Labor F Elektronenmikroahopie N/M   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTROMAGNETIC WAVE REFLECTION; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

SYNCHROTRON RADIATION PLANE WAVE TOPOGRAPHY; X RAY TOPOGRAPHY;

SEMICONDUCTING FILMS;

EID: 0032300927     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-4079(1998)33:4<593::aid-crat593>3.0.co;2-i     Document Type: Article

References (5)

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4. BÖRRMANN, G.: Physik. Z. 42 (1941) 157
5. CHERN, C. H., WANG, K. L., BAI, G., NICOLET, M.-A.: Mat. Res. Soc. Symp. Proc. 220 (1991) 175