The effect of substrate temperature and interface oxide layer on aluminum induced crystallization of sputtered amorphous silicon

Materials Research Society Symposium Proceedings

Volumn 808, Issue , 2004, Pages 315-320

  Hossain, Maruf ^a   Abu Safe, Husam ^a   Barghouti, Marwan ^a   Naseem, Hameed ^a   Brown, William D ^a  

^a University of Arkansas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CRYSTALLIZATION; INTERFACES (MATERIALS); MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SPUTTERING; X RAY DIFFRACTION;

ALUMINUM INDUCED CRYSTALLIZATION (AIC); ENVIRONMENTAL SCANNING ELECTRON MICROSCOPE (ESEM); SOLID PHASE CRYSTALLIZATION (SPC); SUBSTRATE TEMPERATURE;

AMORPHOUS SILICON;

EID: 12744276057     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-808-a4.22     Document Type: Conference Paper

References (10)

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