Novel pure organic particles for copper CMP at low down force

Materials Research Society Symposium Proceedings

Volumn 816, Issue , 2004, Pages 41-47

  Cheemalapati, K ^a   Chowdhury, A ^a   Duvvuru, V ^a   Lin, Yong ^a   Tang, Kwok ^b   Bian, Guomin ^b   Yao, Lily ^c   Li, Yuzhuo ^a  

^a CLARKSON UNIVERSITY   (United States)

^b Dynea   (Canada)

^c Strasbaugh   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABRASIVES; ADSORPTION; COPPER; DIELECTRIC MATERIALS; ETCHING; MICELLES; SENSITIVITY ANALYSIS; SLURRIES;

HYDROPHILIC PARTICLES; ISOELECTRIC POINTS (IEP); ORGANIC PARTICLES; REMOVAL RATE;

CHEMICAL MECHANICAL POLISHING;

EID: 12744268609     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-816-k1.7     Document Type: Conference Paper

References (7)

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3. Haba, Shinichi; Fukuda, Keiji; Ohta, Yoshiharu; Koubuchi, Yasushi; Katouda, Takashi, Japanese Journal of Applied Physics, Part 1: Regular Papers, Short Notes & Review Papers 42, no. 2A (2003): 418-428.
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5. Y. Li, X. Shi, J. Keleher, "Chemical and Mechanical Balance for Defectivity Reduction in Copper CMP," MRS Spring 2002 Meeting, San Francisco, CA, April 1-5, 2002.
6. F. Odeh, W. America, S. Dhane, and Y. Li, Langmuir, submitted 2004
7. Solozhenko, V. L.; Petrusha, I. A.; Engler, O.; Bingert, J. F; Journal of Materials Science 36, no. 11 (2001): 2659-2665.