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Volumn 5041, Issue , 2003, Pages 61-69

Characterization and Reduction of Copper Chemical Mechanical Polishing Induced Scratches

Author keywords

Abrasives; Alumina; Chemical mechanical polishing; Copper; Defects; Microscratches; Scratches; Silica; Slurry

Indexed keywords

ABRASIVES; AGGLOMERATION; ALUMINA; COPPER; DEFECTS; EROSION;

EID: 0242524674     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485223     Document Type: Conference Paper
Times cited : (10)

References (8)
  • 5
    • 0003152418 scopus 로고    scopus 로고
    • A Model for Mechanical Wear and Abrasive Particle Adhesion during the Chemical Mechanical Polishing Process
    • G. Ahmadi, and X. Xia, "A Model for Mechanical Wear and Abrasive Particle Adhesion during the Chemical Mechanical Polishing Process", J. Electrochem. Soc., 148, 99-109, 2001.
    • (2001) J. Electrochem. Soc. , vol.148 , pp. 99-109
    • Ahmadi, G.1    Xia, X.2
  • 6
    • 0033639551 scopus 로고    scopus 로고
    • Dependency of Dishing on Polish Time and Slurry Chemistry in Cu CMP
    • V. Nguyen, H. VanKranenburg, P. Woerlee, "Dependency of Dishing on Polish Time and Slurry Chemistry in Cu CMP", Microelectronic Engineering, 50, 403-410, 2000.
    • (2000) Microelectronic Engineering , vol.50 , pp. 403-410
    • Nguyen, V.1    VanKranenburg, H.2    Woerlee, P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.