Ultrathin dielectric films grown by solid phase reaction of Pr with SiO2

Materials Research Society Symposium Proceedings

Volumn 811, Issue , 2004, Pages 253-258

  Müssig, Hans Joachim ^a   Dabrowski, Jarek ^a   Wenger, Christian ^a   Łupina, Grzegorz ^a   Sorge, Roland ^a   Formanek, Peter ^a   Zaumseil, Peter ^a   Schmeißer, Dieter ^b  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; FILM GROWTH; MOLECULAR BEAM EPITAXY; MOS CAPACITORS; OXIDATION; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; SILICA; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE EQUIVALENT THICKNESS (CET); FORMATION ENTHALPY; GATE DIELECTRICS; TUNNELING CURRENTS;

DIELECTRIC FILMS;

EID: 12744266556     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-811-d7.10     Document Type: Conference Paper

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