Boronizing structures of Si(1 1 3) surfaces

Surface Science

Volumn 576, Issue 1-3, 2005, Pages 83-88

  Zhang, Zhaohui ^a   Sumitomo, Koji ^b  

^a PEKING UNIVERSITY   (China)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

Auger electron spectroscopy; Boron; High index single crystal surfaces; Ion implantation methods; Scanning tunneling microscopy; Silicon; Surface relaxation and reconstruction

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; BORON; CRYSTAL ORIENTATION; DEGASSING; ELECTRONIC DENSITY OF STATES; EPITAXIAL GROWTH; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE PROPERTIES; ULTRAHIGH VACUUM;

BORONIZING; HIGH INDEX SINGLE CRYSTAL SURFACES; SURFACE RECONSTRUCTION; SURFACE RELAXATION;

SILICON;

EID: 12444285824     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.12.002     Document Type: Article

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