Compensation mechanisms in magnesium doped GaN

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 2, 2004, Pages 216-220

  Godlewski, M ^a,b   Przybylinska H ^a   Bozek, R ^c   Goldys, E M ^d   Bergman, J P ^e   Monemar, B ^e   Grzegory, I ^f   Porowski, S ^f  

^a INSTITUTE OF PHYSICS   (Poland)

^b CARDINAL STEFAN WYSZY SKI UNIVERSITY   (Poland)

^c UNIVERSITY OF WARSAW   (Poland)

^d MACQUARIE UNIVERSITY   (Australia)

^e LINKÖPING UNIVERSITY   (Sweden)

^f INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); ELECTRONS; LIGHT EMISSION; LIGHT POLARIZATION; MAGNESIUM PRINTING PLATES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; RAMAN SCATTERING; ANNEALING; CRYOSTATS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; EXCITONS; FREQUENCY DOUBLERS; SEEBECK EFFECT; SEMICONDUCTOR DOPING;

COMPENSATION PROCESSES; POTENTIAL FLUCTUATIONS;

GALLIUM NITRIDE;

COMPENSATION MECHANISMS; DELOCALIZED CARRIERS; POTENTIAL FLUCTUATIONS; SEEBECK COEFFICIENTS;

EID: 1242332843     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303904     Document Type: Conference Paper

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