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Physical Review B

Volumn 52, Issue 23, 1995, Pages 16702-16706

Properties of the yellow luminescence in undoped GaN epitaxial layers

(10) Hofmann, D M a Kovalev, D a Steude, G a Meyer, B K a Hoffmann, A b Eckey, L b Heitz, R b Detchprom, T c Amano, H d Akasaki, I d

a TECHNICAL UNIVERSITY OF MUNICH (Germany)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

c NAGOYA UNIVERSITY (Japan)

d MEIJI UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751345775 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.52.16702 Document Type: Article

Times cited : (260)

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