-
1
-
-
0003779548
-
The electrical conductivity of molybdenite
-
A. Waterman,"The Electrical Conductivity of Molybdenite", Phys Rev., v21, pp540-549,1923.
-
(1923)
Phys Rev
, vol.21
, pp. 540-549
-
-
Waterman, A.1
-
3
-
-
36049053305
-
Reversible electrical switching phenomena in disordered structures
-
Nov. 11
-
S.Ovshinsky, "Reversible Electrical Switching Phenomena in Disordered Structures," Phys. Rev. Lett, V. 21, no. 20, pp. 1450-1453, Nov. 11,1968.
-
(1968)
Phys. Rev. Lett
, vol.21
, Issue.20
, pp. 1450-1453
-
-
Ovshinsky, S.1
-
4
-
-
0000485174
-
Electronic phenomena in amorphous semiconductors
-
H.Fritzsche, "Electronic Phenomena in Amorphous Semiconductors" , Annual Review of Materials Science, v2, pp697-744, 1972.
-
(1972)
Annual Review of Materials Science
, vol.2
, pp. 697-744
-
-
Fritzsche, H.1
-
5
-
-
0019026872
-
Threshold switching in chalcogenide-glass thin films
-
D.Adler, M.Shur, M.Silver, S.Ovshinsky, "Threshold Switching in Chalcogenide-Glass Thin Films'\ J. Appl. Phys., v51, #6, ppl03-123,1980.
-
(1980)
J. Appl. Phys
, vol.51
, Issue.6
, pp. 103-123
-
-
Adler, D.1
Shur, M.2
Silver, M.3
Ovshinsky, S.4
-
6
-
-
0000721626
-
Compound materials for reversible, phase-change optical data storage
-
M.Chen, K.Rubin, R.Barton, "Compound Materials for Reversible, Phase-Change Optical Data Storage", Appl. Phys. Lett., v49, #9, pp502-504, 1986.
-
(1986)
Appl. Phys. Lett
, vol.49
, Issue.9
, pp. 502-504
-
-
Chen, M.1
Rubin, K.2
Barton, R.3
-
7
-
-
4243124224
-
Recent advances in erasable phase-change optical disks
-
N.Akahira, N.Yamada, K.Kimura, M.Takao, "Recent Advances in Erasable Phase-Change Optical Disks", SPIE vol. 899 Optical Storage Technology and Applications, ppl88-195, 1988.
-
(1988)
SPIE Vol. 899 Optical Storage Technology and Applications
, pp. 188-195
-
-
Akahira, N.1
Yamada, N.2
Kimura, K.3
Takao, M.4
-
8
-
-
0005158609
-
Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory
-
N.Yamada, E.Ohno, K.Nishiuchi, N.Akahira, M.Takao "Rapid-Phase Transitions of GeTe-Sb2Te3 Pseudobinary Amorphous Thin Films for an Optical Disk Memory", J. Appl. Phys., v69 #5, pp2849-2857, 1991.
-
(1991)
J. Appl. Phys
, vol.69
, Issue.5
, pp. 2849-2857
-
-
Yamada, N.1
Ohno, E.2
Nishiuchi, K.3
Akahira, N.4
Takao, M.5
-
9
-
-
0030126219
-
Existence of electronic excitation enhanced crystallization in GeSb amorphous thin films upon ultrashort laser pulse irradiation
-
J.Solis, C.Alfonso, S.Hyde, N.Barry, P.French, "Existence of Electronic Excitation Enhanced Crystallization in GeSb Amorphous Thin Films upon Ultrashort Laser Pulse Irradiatiori'\ Phys. Rev. Lett., v76 #14, pp2519-2522,1996. (Pubitemid 126640205)
-
(1996)
Physical Review Letters
, vol.76
, Issue.14
, pp. 2519-2522
-
-
Solis, J.1
Afonso, C.N.2
Hyde, S.C.W.3
Barry, N.P.4
French, P.M.W.5
-
10
-
-
0343873313
-
High sensitivity overwritable phase-change optical disk for "PD" systems
-
T.Ohta, K.Yoshioka, Hisomura, T.Akiyama, R.Imanaka, "High Sensitivity Overwritable Phase-Change Optical Disk for "PD" Systems", Optical Data Storage'95, Proc. SPIE 2514, pp302-311, 1995.
-
(1995)
Optical Data Storage'95, Proc. SPIE 2514
, pp. 302-311
-
-
Ohta, T.1
Yoshioka, K.2
Hisomura3
Akiyama, T.4
Imanaka, R.5
-
11
-
-
0029392223
-
Laser-induced crystallization phenomena in ge-te-based alloys. I. Characterization of nucleation and growth
-
J.Coombs, A.Jongenelis, W.van Es-Spiekman, B.Jacobs, "Laser-Induced Crystallization Phenomena in Ge-Te-Based Alloys. I. Characterization of Nucleation and Growth", J. Appl. Phys., v78 #8, pp4906-4917,1995.
-
(1995)
J. Appl. Phys
, vol.78
, Issue.8
, pp. 4906-4917
-
-
Coombs, J.1
Jongenelis, A.2
Van Es-Spiekman, W.3
Jacobs, B.4
-
12
-
-
0029392282
-
Laser-induced crystallization phenomena in ge-te-based alloys. II. Composition dependence of nucleation and growth
-
J.Coombs, A.Jongenelis, W.van Es-Spiekman, B.Jacobs, "Laser-Induced Crystallization Phenomena in Ge-Te-Based Alloys. II. Composition Dependence of Nucleation and Growth", J. Appl. Phys., v78 #8, pp4918-4928, 1995.
-
(1995)
J. Appl. Phys
, vol.78
, Issue.8
, pp. 4918-4928
-
-
Coombs, J.1
Jongenelis, A.2
Van Es-Spiekman, W.3
Jacobs, B.4
-
13
-
-
0029359734
-
The structure and crystallization of phase change optical disk material GelSb2Te4
-
Aug.
-
Z.Mao, H.Chen, AJung, "The Structure and Crystallization of Phase Change Optical Disk Material GelSb2Te4", J. Appl. Phys., v78 #4, pp2338-2342, Aug. 1995.
-
(1995)
J. Appl. Phys
, vol.78
, Issue.4
, pp. 2338-2342
-
-
Mao, Z.1
Chen, H.2
Jung, A.3
-
14
-
-
0000894956
-
Measurement of the thermal coefficients of nonreversible phase-change optical recording films
-
Y.Hsieh, M.Mansuripur, J.Volkmer,A.Brewen, "Measurement of the Thermal Coefficients of Nonreversible Phase-Change Optical Recording Films", Applied Optics, v36 #4, pp866-872, Feb. 1997. (Pubitemid 127638543)
-
(1997)
Applied Optics
, vol.36
, Issue.4
, pp. 866-872
-
-
Hsieh, Y.-C.1
Mansuripur, M.2
Volkmer, J.3
Brewen, A.4
-
15
-
-
0004140009
-
-
Ph.D. Dissertation, Wayne State University, Detroit, MI
-
G. Wicker, "A Comprehensive Model of Submicron Chalcogenide Switching Devices", Ph.D. Dissertation, Wayne State University, Detroit, MI, 1996.
-
(1996)
A Comprehensive Model of Submicron Chalcogenide Switching Devices
-
-
Wicker, G.1
-
16
-
-
0002154369
-
Amorphous materials-The key to new devices
-
S.Ovshinsky, "Amorphous Materials-The Key to New Devices" IEEE Proc. of CAS, vl, pp33, 1998.
-
(1998)
IEEE Proc. of CAS
, vol.1
, pp. 33
-
-
Ovshinsky, S.1
-
17
-
-
0034843454
-
Chalcogenide-based non-volatile memory technology
-
January
-
J. Maimon, E. Spall, R. Quinn, S. Schnur, "Chalcogenide-Based Non-Volatile Memory Technology", IEEE Aerospace 2001, January 2001.
-
(2001)
IEEE Aerospace 2001
-
-
Maimon, J.1
Spall, E.2
Quinn, R.3
Schnur, S.4
-
18
-
-
11244260084
-
Chalcogenide-based non-volatile memory technology
-
Nov
-
J. Maimon, E. Spall, R. Quinn, S. Schnur, "Chalcogenide-Based Non-Volatile Memory Technology", NVMTS, Nov 2000.
-
(2000)
NVMTS
-
-
Maimon, J.1
Spall, E.2
Quinn, R.3
Schnur, S.4
-
19
-
-
0034451875
-
Total dose radiation response and high temperature imprint characteristics of chalcogenide based RAM resistor elements
-
DOI 10.1109/23.903803, PII S0018949900111906
-
S. Bernacki, K. Hunt, S. Tyson, S. Hudgens, B. Pashmokov, W. Czubatzj, "Total Dose Radiation Response and High Temperature Imprint Characteristics of Chalcogenide Based RAM Resistor Elements", IEEE Trans. Nuc. Sci, v47, #6, pp2528-2533, 2000. (Pubitemid 32321337)
-
(2000)
IEEE Transactions on Nuclear Science
, vol.47
, Issue.6
, pp. 2528-2533
-
-
Bernacki, S.1
Hunt, K.2
Tyson, S.3
Hudgens, S.4
Pashmakov, B.5
Czubatyj, W.6
|