SCOPUS 정보 검색 플랫폼

Physica B: Condensed Matter

Volumn 302-303, Issue , 2001, Pages 263-267

Interstitial carbon-substitutional tin center in silicon (?)

(2) Lavrov, E V a,b Fanciulli, M c

a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS (Russian Federation)

b DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

c LABORATORIO MDM (Italy)

Author keywords

Carbon; Infrared absorption; Silicon; Tin

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CARBON; DOPING (ADDITIVES); ELECTRON IRRADIATION; ELECTRON TRANSITIONS; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); LATTICE VIBRATIONS; REACTION KINETICS;

INTERSTITIAL CARBONS; LOCAL VIBRATIONAL MODES;

SILICON;

EID: 0034967790 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00439-2 Document Type: Conference Paper

Times cited : (7)

References (23)

1
- 0001548018
- T.S. Moss (Ed.), Elsevier Science, Amsterdam, and references therein
- (1994) Handbook on Semiconductors , vol.3 b , pp. 1557
- Davies, G.¹ Newman, R.C.²

2
- 0014740978
- (1970) Solid State Commun. , vol.8 , pp. 175
- Bean, A.R.¹ Newman, R.²

3
- 3743153340
- (1976) Phys. Rev. Lett. , vol.36 , pp. 1329
- Watkins, G.D.¹ Brower, K.L.²

4
- 0003937866
- M. Hulin (Ed.), Dunod, Paris
- (1965) Radiation Effects in Semiconductors
- Watkins, G.D.¹

5
- 0000238980
- (1990) Phys. Rev. B , vol.42 , pp. 5765
- Song, L.W.¹ Zhan, X.D.² Watkins, G.D.³

6
- 0000967809
- (1999) Phys. Rev. B , vol.60 , pp. 8081
- Lavrov, E.V.¹ Hoffmann, L.² Bech Nielsen, B.³

7
- 0001767301
- (2000) Phys. Rev. B , vol.61 , pp. 12939
- Byberg, J.R.¹ Bech Nielsen, B.² Fanciulli, M.³ Estreicher, S.K.⁴ Fedders, P.A.⁵

8
- 0033331178
- (1999) Physica B , vol.273-274 , pp. 256
- Lavrov, E.V.¹ Bech Nielsen, B.² Byberg, J.R.³ Lindström, J.L.⁴

9
- 4243796089
- (2000) Phys. Rev. B , vol.62 , pp. 158
- Lavrov, E.V.¹ Bech Nielsen, B.² Byberg, J.R.³ Hourahine, B.⁴ Jones, R.⁵ Öberg, S.⁶ Briddon, P.R.⁷

10
- 3743054421
- (1989) Phys. Rev. Lett. , vol.63 , pp. 70
- Endrös, A.¹

11
- 0000819328
- (1996) Phys. Rev. Lett. , vol.77 , pp. 4812
- Safonov, A.N.¹ Lightowlers, E.C.² Davies, G.³ Leary, P.⁴ Jones, R.⁵ Öberg, S.⁶

12
- 0345072504
- (1999) Mater. Sci. Eng. B , vol.58 , pp. 167
- Hoffmann, L.¹ Lavrov, E.V.² Bech Nielsen, B.³

13
- 4243325182
- (1999) Physica B , vol.273-274 , pp. 275
- Lavrov, E.V.¹ Hoffmann, L.² Bech Nielsen, B.³ Lindström, J.L.⁴

14
- 0000297160
- (1972) IEEE Trans. Nucl. Sci. , vol.NS-19 , pp. 220
- Brelot, A.¹

15
- 0001925727
- J.E. Whitehouse (Ed.), Institute of Physics, London and Bristol, Conference Series No. 16
- (1973) Radiation Damage and Defects in Semiconductors , pp. 191
- Brelot, A.¹

16
- 0343913869
- (1997) Phys. Rev. B , vol.56 , pp. 6396
- Kringhøj, P.¹ Larsen, A.N.²

17
- 0001349487
- (1975) Phys. Rev. B , vol.12 , pp. 4383
- Watkins, G.D.¹

18
- 0016569266
- (1975) Solid State Commun. , vol.17 , pp. 1205
- Watkins, G.D.¹

19
- 0033312171
- (1999) Physica B , vol.273-274 , pp. 524
- Fanciulli, M.¹ Byberg, J.R.²

20
- 0001259212
- (2000) Phys. Rev. B , vol.61 , pp. 2657
- Fanciulli, M.¹ Byberg, J.R.²

21
- 0004077698
- Vol. 10.05 ASTM, Philadelphia
- (1988) Annual Book of ASTM Standards

22
- 0023166007
- (1987) Solid State Comm. , vol.61 , pp. 241
- Thonke, J.¹ Weber, J.²

23
- 0001134125
- and references therein
- (1993) Phys. Rev. B , vol.47 , pp. 6363
- Zhan, X.D.¹ Watkins, G.D.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.