-
1
-
-
0038040245
-
Radiation induced regeneration through the P-N junction isolation in monolithic IC's
-
Oct.
-
G. Kinoshita et al., "Radiation induced regeneration through the P-N junction isolation in monolithic IC's," IEEE Trans. Nucl. Sci., vol. NS-12, pp. 83-90, Oct. 1965.
-
(1965)
IEEE Trans. Nucl. Sci.
, vol.NS-12
, pp. 83-90
-
-
Kinoshita, G.1
-
2
-
-
0014617202
-
Radiation-induced integrated circuit latchup
-
Dec.
-
J. F. Leavy and R. A. Poll, "Radiation-induced integrated circuit latchup," IEEE Trans. Nucl. Sci., vol. NS-16, pp. 96-103, Dec. 1969.
-
(1969)
IEEE Trans. Nucl. Sci.
, vol.NS-16
, pp. 96-103
-
-
Leavy, J.F.1
Poll, R.A.2
-
3
-
-
1242331678
-
Latchup Prevention in CMOS
-
C. E. Barnes et al., "Latchup Prevention in CMOS,", Sandia Rep. SAND 76-0048, 1976.
-
(1976)
Sandia Rep.
, vol.SAND 76-0048
-
-
Barnes, C.E.1
-
4
-
-
0018586433
-
Latchup control in CMOS integrated circuits
-
Dec.
-
A. Ochoa and W. Dawes, "Latchup control in CMOS integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-26, pp. 5065-5068, Dec. 1976.
-
(1976)
IEEE Trans. Nucl. Sci.
, vol.NS-26
, pp. 5065-5068
-
-
Ochoa, A.1
Dawes, W.2
-
5
-
-
0018552953
-
Neutron irradiation for prevention of latchup in MOS integrated circuits
-
Dec.
-
J. R. Adams and R. J. Sokel, "Neutron irradiation for prevention of latchup in MOS integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-26. pp. 5069-5073, Dec. 1976.
-
(1976)
IEEE Trans. Nucl. Sci.
, vol.NS-26
, pp. 5069-5073
-
-
Adams, J.R.1
Sokel, R.J.2
-
6
-
-
0019007334
-
The prevention of latchup in microcircuits using proton beams
-
Apr.
-
J. K. Eddy and J. Bartko, "The prevention of latchup in microcircuits using proton beams," IEEE Trans. Nucl. Sci., vol. NS-28, pp. 1871-1874, Apr. 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.NS-28
, pp. 1871-1874
-
-
Eddy, J.K.1
Bartko, J.2
-
7
-
-
0023534165
-
Neutron-induced latchup immunity in metal gate CMOS integrated circuits
-
Dec.
-
C. E. Barnes et al., "Neutron-induced latchup immunity in metal gate CMOS integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-34, pp. 1769-1774, Dec. 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.NS-34
, pp. 1769-1774
-
-
Barnes, C.E.1
-
8
-
-
1242309198
-
Neutron and proton irradiation for latchup suppression in a radiation tolerant commercial submicron CMOS process
-
Fontevraud, France, Sept.
-
R. Lacoe et al., "Neutron and proton irradiation for latchup suppression in a radiation tolerant commercial submicron CMOS process," in Proc. RADECS'99, Fontevraud, France, Sept. 1999, pp. 340-345.
-
(1999)
Proc. RADECS'99
, pp. 340-345
-
-
Lacoe, R.1
-
9
-
-
0034450465
-
Application of hardness-by-design methodology to radiation-tolerant ASIC technologies
-
Dec.
-
R. C. Lacoe et al., "Application of hardness-by-design methodology to radiation-tolerant ASIC technologies," IEEE Trans. Nucl. Sci., vol. 47, pp. 2334-2341, Dec. 2000.
-
(2000)
IEEE Trans. Nucl. Sci.
, vol.47
, pp. 2334-2341
-
-
Lacoe, R.C.1
-
10
-
-
0036957353
-
Wavelength dependence of transient laser-induced latchup in epi-CMOS test structures
-
Dec.
-
S. D. Lalumondiere et al., "Wavelength dependence of transient laser-induced latchup in epi-CMOS test structures," IEEE Trans. Nucl Sci., vol. 49, pp. 3059-3066, Dec. 2002.
-
(2002)
IEEE Trans. Nucl Sci.
, vol.49
, pp. 3059-3066
-
-
Lalumondiere, S.D.1
-
11
-
-
1242309196
-
-
Silvaco Data Systems Corp., Santa Clara, CA
-
"Virtual Wafer Fab " Software, Silvaco Data Systems Corp., Santa Clara, CA.
-
"Virtual Wafer Fab " Software
-
-
-
14
-
-
0010676821
-
The calculation of ion ranges in solids with analytic solutions
-
H. Ryssel, Ed. Berlin, Germany: Springer-Verlag
-
J. P. Biersack and J. F. Ziegler, "The calculation of ion ranges in solids with analytic solutions," in Ion Implantation Techniques, H. Ryssel, Ed. Berlin, Germany: Springer-Verlag, 1982.
-
(1982)
Ion Implantation Techniques
-
-
Biersack, J.P.1
Ziegler, J.F.2
-
15
-
-
0035723346
-
Modeling high energy heavy ion damage in silicon
-
Dec.
-
J. P. Spratt et al., "Modeling high energy heavy ion damage in silicon," IEEE Trans. Nucl. Sci., vol. 48, pp. 2136-2139, Dec. 2001.
-
(2001)
IEEE Trans. Nucl. Sci.
, vol.48
, pp. 2136-2139
-
-
Spratt, J.P.1
-
17
-
-
0003311307
-
Single event latchup characteristics of three commercial CMOS processes
-
Albuquerque, NM
-
J. V. Osborn et al., "Single event latchup characteristics of three commercial CMOS processes," in Proc. 7th NASA Symp. VLSI Design, Albuquerque, NM, 1998.
-
(1998)
Proc. 7th NASA Symp. VLSI Design
-
-
Osborn, J.V.1
-
19
-
-
1242309199
-
Modeling the effectiveness of chip layout rules for latchup suppression
-
to be published
-
J. P. Spratt and R. E. Leadon, "Modeling the effectiveness of chip layout rules for latchup suppression," J. Rad Effects Res. Eng., vol. 21-1, to be published.
-
J. Rad Effects Res. Eng.
, vol.21
, Issue.1
-
-
Spratt, J.P.1
Leadon, R.E.2
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