Modeling high-energy heavy-ion damage in silicon

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2136-2139

  Spratt, James P ^a,b   Burke, Edward A ^a,b   Pickel, James C ^a,b   Leadon, Roland E ^b  

^a IEEE   (United States)

^b Full Circle Research Inc ^*

Author keywords

Computer simulation of radiation transport; Heavy ion damage in silicon; Ion implantation in silicon; Range and straggle of ions in silicon

Indexed keywords

RADIATION TRANSPORT CODES;

COMPUTER SIMULATION; HEAVY IONS; ION IMPLANTATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; RADIATION DAMAGE; SEMICONDUCTING SILICON;

HIGH ENERGY PHYSICS;

EID: 0035723346     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983185     Document Type: Conference Paper

References (11)

1. + ion implantation in silicon
2. Divacancy profiles in MeV helium irradiated silicon from reverse I-V measurements
3. 5 to 100 MeV ion implantation and its simulation by the MARLOWE program
4. Implants of aluminum in the 50-120 MeV energy range into silicon
5. Defect production in silicon irradiated with 5.68 GeV Xe ions
6. Range concepts and heavy ion ranges
7. Correlation of particle-induced displacement damage in silicon
8. Projected range distributions of low-, intermediate-, and high-energy ions