Individual and parallel behavior of high current density, high-voltage 4h-silicon carbide P-i-n diodes

IEEE Transactions on Magnetics

Volumn 41, Issue 1 II, 2005, Pages 330-333

  Surls, Dwayne ^a   Crawford, Mark ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Current sharing; High current density; P i n diode; Parallel diodes; Pulsed diode characteristics; SiC

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTROMAGNETIC LAUNCHERS; FAILURE ANALYSIS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

CURRENT SHARING; HIGH CURRENT DENSITY; P-I-N DIODES; PARALLEL DIODES; PULSED DIODE CHARACTERISTICS; SIC;

SEMICONDUCTOR DIODES;

EID: 12344294822     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.838992     Document Type: Article

References (5)

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