Organic field-effect transistors based on high electron and ambipolar carrier transport properties of copper-phthalocyanine

Chemical Physics Letters

Volumn 402, Issue 4-6, 2005, Pages 395-398

  Yasuda, Takeshi ^a   Tsutsui, Tetsuo ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON MOBILITY; ELECTRONS; HOLE MOBILITY; THIN FILMS; TRANSPORT PROPERTIES;

CARRIER TRANSPORT; COPPER-PHTHALOCYANINE (CUPC); DRAIN ELECTRODES; ORGANIC FIELD-EFFECT TRANSISTOR (OFET);

FIELD EFFECT TRANSISTORS;

CALCIUM; COPPER; PHTHALOCYANINE;

ARTICLE; ELECTRIC CURRENT; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRODE; ELECTRON; FILM; INJECTION; PHYSICAL CHEMISTRY; SEMICONDUCTOR;

EID: 12344275763     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2004.12.072     Document Type: Article

References (23)

1. M. Pope, and C.E. Swenberg Electronic Processes in Organic Crystals and Polymers 1999 Oxford University Press
2. A.J. Ikushima, T. Kanno, S. Yoshida, and A. Maeda Thin Solid Films 273 1996 35
3. J.Y. Kim, and A.J. Bard Chem. Phys. Lett. 383 2004 11
4. G. Guillaud, M.A. Sadoun, M. Maitrot, J. Simon, and M. Bouvet Chem. Phys. Lett. 167 1990 503
5. H. Tada, H. Touda, M. Takawa, and K. Matsushige Appl. Phys. Lett. 76 2000 873
6. S.A. Van Slyke, C.H. Chen, and C.W. Tang Appl. Phys. Lett. 69 1996 2162
7. C.W. Tang Appl. Phys. Lett. 48 1986 183
8. Z. Bao, A.J. Lovinger, and A. Dodabalapur Appl. Phys. Lett. 69 1996 3066
9. W. Mycielski, B. Ziolkwska, and A. Lipinski Thin Solid Films 91 1982 335
10. A. Sussman J. Appl. Phys. 38 1967 2748
11. T. Yasuda, T. Goto, K. Fujita, and T. Tsutsui Appl. Phys. Lett. 85 2004 2098
12. L. Yan, N.J. Watkins, S. Zorba, Y. Gao, and C.W. Tang Appl. Phys. Lett. 79 2001 4148
13. T. Yasuda, K. Fujita, H. Nakashima, and T. Tsutsui Jpn. J. Appl. Phys. 42 2003 6614
14. S. Ogawa, Y. Kimura, H. Ishii, and M. Niwano Jpn. J. Appl. Phys. 42 2003 L1275
15. G. Horowitz Adv. Mater. 10 1998 365
16. E.J. Meijer, D.M. de Leeuw, S. Setayesh, E. van Veenendaal, B.H. Huisman, P.W.M. Blom, J.C. Hummelen, U. Scherf, and T.M. Klapwijk Nat. Mater. 2 2003 678
17. R.J. Chersterfield, C.R. Newman, T.M. Pappenfus, P.C. Ewbank, M.H. Haukaas, K.R. Mann, L.L. Miller, and C.D. Frisbile Adv. Mater. 15 2003 1278
18. C. Rost, D.J. Gundlach, S. Karg, and W. Rieß J. Appl. Phys. 95 2004 5782
19. A. Dodabalapur, H.E. Katz, L. Torsi, and R.C. Haddon Appl. Phys. Lett. 68 1996 1108
20. K. Kudo, T. Sumimoto, K. Hiraga, S. Kuniyoshi, and K. Tanaka Jpn. J. Appl. Phys. 36 1997 6994
21. J. Zhang, J. Wang, H. Wang, and D. Yan Appl. Phys. Lett. 84 2004 142
22. D.J. Gundlach, L.L. Jia, and T.N. Jackson IEEE Electron Device Lett. 22 2001 571
23. A. Bolognesi, A. Di Carlo, and P. Lugli Appl. Phys. Lett. 81 2002 4646