X-Ray studies of AlxGA1-xAs implanted with 1.5 MeV As ions

Vacuum

Volumn 70, Issue 2-3, 2003, Pages 115-121

  Wierzchowski, W ^a   Wieteska, K ^b   Graeff, W ^c   Turos, A ^a   Grotzschel R ^d  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF ATOMIC ENERGY   (Poland)

^c DESY   (Germany)

^d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

AlGaAS; Ion implantation; Lattice strain; X ray diffraction

Indexed keywords

ARSENIC; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; X RAY DIFFRACTION ANALYSIS;

LATTICE STRAIN;

ALUMINUM COMPOUNDS;

EID: 12244313916     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00629-2     Document Type: Conference Paper

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