Application of Bragg-case section topography for strain profile determination in AIIIBV implanted semiconductors

Journal of Physics D: Applied Physics

Volumn 34, Issue 10 SPEC. ISS. A, 2001, Pages

  Wieteska, K ^a   Wierzchowski, W ^b   Graeff, W ^c   Turos, A ^b,d  

^a INSTITUTE OF ATOMIC ENERGY   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c DESY   (Germany)

^d SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; MULTILAYERS; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN;

BRAGG-CASE SECTION TOPOGRAPHY;

ION IMPLANTATION;

EID: 0035926613     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/10a/325     Document Type: Article

References (5)

1. Wieteska K, Wierzchowski W, Turos A, Graeff W, Gawlik G and Grötzschel R 1999 18th IUCR Congress (4-13 August, 1999, Glasgow), Collected Abstracts P06.11.018, 502
2. Wieteska K, Wierzchowski W, Graeff W and Falta J 1999 HASYLAB Jahresbericht p 445
3. Wieteska W, Wierzchowski W, Graeff W and Turos A 2000 J. Synchron. Rad. 7 315
4. Wierzchowski W, Wieteska K, Graeff W and Turos A 1999 J. Alloys Compounds 286 343
5. Wierzchowski W, Wieteska K, Turos A, Graeff W and Gawlik G 2001 VACUUM at press