Synchrotron investigation of strain profiles in the implanted semiconductors

Vacuum

Volumn 63, Issue 4, 2001, Pages 767-773

  Wierzchowski, W ^a   Wieteska, K ^b   Turos, A ^a,c   Graeff, W ^d   Gawlik, G ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF ATOMIC ENERGY   (Poland)

^c SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^d DESY   (Germany)

Author keywords

AIIIBV semiconductors; Ion implantation; Lattice strain; X ray diffraction

Indexed keywords

AMORPHIZATION; EPITAXIAL GROWTH; ION IMPLANTATION; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POINT DEFECTS; PROTONS; SINGLE CRYSTALS; STRAIN; X RAY DIFFRACTION ANALYSIS;

IMPLANTED SEMICONDUCTORS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035899431     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00272-X     Document Type: Conference Paper

References (9)