The effect of plastic strain relaxation on the morphology of Ge quantum dot superlattices

Journal of Crystal Growth

Volumn 274, Issue 3-4, 2005, Pages 367-371

  Liu, J L ^a   Wang, K L ^b   Xie, Q H ^c   Thomas, S G ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c MOTOROLA INC   (United States)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting germanium

Indexed keywords

MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; NUCLEATION; SEMICONDUCTOR QUANTUM DOTS; STRAIN; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

SIZE UNIFORMITY; STRAIN DISTRIBUTION; STRAIN RELAXATION; THREADING DISLOCATIONS;

GERMANIUM;

EID: 12244311920     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.057     Document Type: Article

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