Growth of (Ti,Zr)N Films on Si by Dc Reactive Sputtering of TiZr in N 2/Ar Gas Mixtures Effect of Flow Ratio

Journal of the Electrochemical Society

Volumn 151, Issue 3, 2004, Pages

  Kuo, Yu Lin ^a   Lee, Chiapyng ^a   Lin, Jing Cheng ^b   Peng, Chao Hsien ^b   Chen, Li Chien ^b   Hsieh, Ching Hua ^b   Shue, Shau Lin ^b   Liang, Mong Song ^b   Daniels, Brian J ^c   Huang, Cheng Lin ^d   Lai, Chih Huang ^d  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b Taiwan Semiconductors Manufacturing Company   (Taiwan)

^c HONEYWELL   (United States)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; COMPOSITION; CRYSTAL STRUCTURE; LATTICE CONSTANTS; MAGNETRON SPUTTERING; NITROGEN; SILICON; SPUTTERING; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

COLUMNAR CRYSTALLITES; FOUR-POINT PROBE;

TITANIUM NITRIDE;

EID: 12144287614     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1644603     Document Type: Article

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