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Volumn 70, Issue , 2002, Pages 420-421
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Low-threshold 1.3-μm AlGaInAs buried heterostructure laser diodes for 85°C, 10-Gb/s operation
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
HETEROJUNCTIONS;
METALLORGANIC VAPOR PHASE EPITAXY;
OSCILLATIONS;
OXIDATION;
RELAXATION PROCESSES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
THERMAL EFFECTS;
ETHERNET SYSTEMS;
SEMICONDUCTOR LASERS;
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EID: 0036441389
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (6)
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References (3)
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