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Volumn 70, Issue , 2002, Pages 420-421

Low-threshold 1.3-μm AlGaInAs buried heterostructure laser diodes for 85°C, 10-Gb/s operation

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; OSCILLATIONS; OXIDATION; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EFFECTS;

EID: 0036441389     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (3)
  • 1
    • 0001025465 scopus 로고    scopus 로고
    • 85°C 10 Gb/s operation of 1.3 μm InGaAlAs MQW-DFB lasers
    • M. Aoki, T. Sudo, T. Tsuchiya, D. Takemoto and S. Tsuji, "85°C 10 Gb/s operation of 1.3 μm InGaAlAs MQW-DFB lasers," in Proc. ECOC 2000, vol 1, pp 123-124, 2000.
    • (2000) Proc. ECOC 2000 , vol.1 , pp. 123-124
    • Aoki, M.1    Sudo, T.2    Tsuchiya, T.3    Takemoto, D.4    Tsuji, S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.