Determination of defect level parameters in semi-insulating GaAs:Cr from transient photocurrent experiment

Semiconductor Science and Technology

Volumn 20, Issue 1, 2005, Pages 56-61

  Belgacem, H ^a   Merazga, A ^a   Longeaud, C ^b  

^a UNIVERSITY OF BISKRA   (Algeria)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM; COMPUTER SIMULATION; FOURIER TRANSFORMS; FREQUENCIES; PHOTOCURRENTS; SEMICONDUCTOR DOPING;

ARRHENIUS PLOTS; GAUSSIAN BANDS; HOLE TRAPPING; TRANSIENT PHOTOCURRENTS (TPC);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 12144285053     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/1/009     Document Type: Article

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