Transient photoconductivity, density of tail states and doping effect in amorphous silicon

Solid State Communications

Volumn 112, Issue 10, 1999, Pages 535-539

  Merazga, A ^a   Belgacem, H ^a   Main, C ^b   Reynolds, S ^b  

^a UNIVERSITY OF BISKRA   (Algeria)

^b UNIVERSITY OF ABERTAY DUNDEE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BAND STRUCTURE; ELECTRONIC DENSITY OF STATES; HYDROGEN; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

DENSITY OF TAIL STATES; MULTIPLE TRAPPING (MT) MODELS; TRANSIENT PHOTOCONDUCTIVITY (TPC);

SEMICONDUCTING SILICON;

EID: 0033330589     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00408-1     Document Type: Article

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