Quantitative comparison of terahertz emission from (100) InAs surfaces and a GaAs large-aperture photoconductive switch at high fluences

Applied Optics

Volumn 44, Issue 1, 2005, Pages 149-153

  Reid, Matthew ^a   Fedosejevs, Robert ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROOPTICAL EFFECTS; INFRARED RADIATION; LASER PULSES; LIGHT AMPLIFIERS; MAGNETIC FIELDS; PHOTOCONDUCTIVITY; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; VELOCITY MEASUREMENT;

LARGE-APERTURE PHOTOCONDUCTIVE SWITCH (LAPCS); PULSE ENERGY; TERAHERTZ (THZ); WAVELENGTH;

INDIUM COMPOUNDS;

EID: 12144256303     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.44.000149     Document Type: Article

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