Magnetic-field-induced enhancement of THz-radiation power from femtosecond-laser-irradiated InAs up to 27 T

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 5 B, 2003, Pages

  Takahashi, Hiroshi ^a   Suzuki, Yuji ^a   Quema, Alex ^b   Sakai, Masahiro ^b   Yano, Takayuki ^b   Ono, Shingo ^b   Sarukura, Nobuhiko ^b   Hosomizu, Masato ^c   Tsukamoto, Takeyo ^c   Nishijima, Gen ^d   Watanabe, Kazuo ^d  

^a GRADUATE UNIVERSITY FOR ADVANCED STUDIES   (Japan)

^b INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

Hybrid magnet; InAs; Semiconductor surface; Terahertz radiation; Tl:sapphire laser

Indexed keywords

LASER APPLICATIONS; MAGNETIC FIELD EFFECTS; PERMITTIVITY; SUBSTRATES;

SEMICONDUCTOR SURFACES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 17744409859     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l532     Document Type: Article

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