Excitation fluence dependence of terahertz radiation mechanism from femtosecond-laser-irradiated InAs under magnetic field

Applied Physics Letters

Volumn 83, Issue 6, 2003, Pages 1068-1070

  Takahashi, Hiroshi ^a   Quema, Alex ^b   Yoshioka, Ryoichiro ^b   Ono, Shingo ^a,b   Sarukura, Nobuhiko ^a,b  

^a GRADUATE UNIVERSITY FOR ADVANCED STUDIES   (Japan)

^b INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; LASER BEAM EFFECTS; LIGHT ABSORPTION; MAGNETIC FIELD EFFECTS; SPECTROSCOPIC ANALYSIS;

RADIATION MECHANISMS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0042426033     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1600842     Document Type: Article

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