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Volumn 90, Issue 7, 2001, Pages 3409-3412

Magnetic field and temperature dependence of terahertz radiation from InAs surfaces excited by femtosecond laser pulses

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Indexed keywords


EID: 0035476989     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1399023     Document Type: Article
Times cited : (22)

References (20)
  • 6
    • 0000837346 scopus 로고    scopus 로고
    • N. Sarukura, H. Ohtake, S. Izumida, and Z. Liu, J. Appl. Phys. 84, 1 (1998); according to recalibration of the bolometer sensitivity by Sarukura et al., the total radiation power from an InAs surface under magneticfield of 1 T is corrected to be about 50 μW with pump power of 1 W.
    • (1998) J. Appl. Phys. , vol.84 , pp. 1
    • Sarukura, N.1    Ohtake, H.2    Izumida, S.3    Liu, Z.4
  • 18
    • 0002531092 scopus 로고
    • edited by R. K. Willardson and A. C. Beer Academic, New York
    • D. L. Rode, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1975), Vol. 10, p. 1.
    • (1975) Semiconductors and Semimetals , vol.10 , pp. 1
    • Rode, D.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.