257nm wavelength mask inspection for 65nm node reticles

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5446, Issue PART 1, 2004, Pages 313-319

  Yoshikawa, Ryoji ^a   Tanizaki, Hiroyuki ^a   Watanabe, Tomohide ^a   Inoue, Hiromu ^a   Ogawa, Riki ^a   Endo, Satoshi ^b   Ikeda, Masami ^b   Takahashi, Yoichiro ^b   Watanabe, Hidehiro ^a  

^a TOSHIBA CORPORATION   (Japan)

^b NUFLARE TECHNOLOGY INC   (Japan)

Author keywords

65nm node; Assisting feature; Defect; Inspection; OPC

Indexed keywords

COMPUTER AIDED DESIGN; DATABASE SYSTEMS; DEFECTS; OPTICS; PHASE SHIFT; REFLECTION; SENSORS;

65NM NODE; ASSISTING FEATURE; OPC; PATTERN MASK;

LIGHT SOURCES;

EID: 11844273303     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.557725     Document Type: Conference Paper

References (4)

1. Defect Sensitivity Monitor - designed by ASML Masktools, Inc.
2. K.Oohashi, et al., Newly developed mask inspection system with DUV laser illumination, Proceedings of SPIE, Vol. 4066(2000), pp452-461.
3. H.Tsuchiya, et al., High-performance DUV inspection system for 100nm-generation masks, Proceedings of SPIE, Vol. 4754(2002), pp526-533.
4. T.Fujiwara, et al., Detection of Half-tone PSM Pinhole with DUV Reflected Light Source, Proceedings of SPIE, Vol. 4754(2002), pp534-541.