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Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1295-1298

Optical properties of InGaN/GaN multiple quantum wells

(7) Allegre J a Lefebvre, P a Juillaguet, S a Camassel, J a Knap, W a Chen, Q b Asif Khan, M b,c

a UNIVERSITÉ MONTPELLIER 2 (France)

b APA Optronics (United States)

c University of South Carolina ^* (United States)

Author keywords

InGaN GaN Multiple Quantum Wells; Time Resolved Photoluminescence

Indexed keywords

GAS LASERS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES;

PULSED NITROGEN LASERS; TIME RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 11644324134 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.264-268.1295 Document Type: Article

Times cited : (2)

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