SCOPUS 정보 검색 플랫폼

Volumn 102, Issue , 1996, Pages 28-32

Bulk and surface structural properties of Si 1-x-y Ge x C y layers processed on Si(001) by pulsed laser induced epitaxy

(9) Guedj, C a,f Boulmer, J a Bouchier, D a Clerc, C b Calvarin, G c Godet, C d Roca I Cabarrocas, P d Houze, F e Mencaraglia, D e

a CNRS (France)

b UNIVERSITÉ PARIS SACLAY (France)

c LABORATOIRE STRUCTURES (France)

d LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

e UNIV PARIS SUD (France)

f NOKIA RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CARBON; EPITAXIAL GROWTH; FILM GROWTH; LASER BEAM EFFECTS; PULSED LASER APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

ELECTRON CHANNELLING PATTERN ANALYSIS; LASER FLUENCE; PULSED LASER INDUCED EPITAXY (PLIE); RUGOSITY;

SEMICONDUCTING FILMS;

EID: 0030564799 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00013-X Document Type: Article

Times cited : (4)

References (11)

1
- 0024752976
- S.S. Iyer, G.L. Patton, J.M. Stork, B.S. Meyerson and D.L. Harame, IEEE Trans. Electron Devices ED-36 (1989) 2043.
- (1989) IEEE Trans. Electron Devices , vol.ED-36 , pp. 2043
- Iyer, S.S.¹ Patton, G.L.² Stork, J.M.³ Meyerson, B.S.⁴ Harame, D.L.⁵

2
- 0028368920
- P. Boucaud, C. Francis, F.H. Julien, J.M. Lourtioz, D. Bouchier, S. Bodnar and J. Regolini, Appl. Phys. Lett. 64 (1994) 875.
- (1994) Appl. Phys. Lett. , vol.64 , pp. 875
- Boucaud, P.¹ Francis, C.² Julien, F.H.³ Lourtioz, J.M.⁴ Bouchier, D.⁵ Bodnar, S.⁶ Regolini, J.⁷

3
- 0343511339
- K. Eberl, S.S. Iyer, S. Zollner, J.C. Tsang and F.K. LeGoues, Appl. Phys. Lett. 60 (1992) 3033.
- (1992) Appl. Phys. Lett. , vol.60 , pp. 3033
- Eberl, K.¹ Iyer, S.S.² Zollner, S.³ Tsang, J.C.⁴ LeGoues, F.K.⁵

4
- 0000850479
- Q.-Y. Tong, H.-M. You, G. Cha and U. Gösele, Appl. Phys. Lett. 62 (1993) 970.
- (1993) Appl. Phys. Lett. , vol.62 , pp. 970
- Tong, Q.-Y.¹ You, H.-M.² Cha, G.³ Gösele, U.⁴

5
- 21544453240
- S. Nishikawa, A. Tanaka and T. Yamaji, Appl. Phys. Lett. 60 (1992) 2270.
- (1992) Appl. Phys. Lett. , vol.60 , pp. 2270
- Nishikawa, S.¹ Tanaka, A.² Yamaji, T.³

6
- 0027905602
- K.J. Kramer, S. Talwar, E. Ishida, K.H. Weiner and T.W. Sigmon, Appl. Surf. Sci. 69 (1993) 121.
- (1993) Appl. Surf. Sci. , vol.69 , pp. 121
- Kramer, K.J.¹ Talwar, S.² Ishida, E.³ Weiner, K.H.⁴ Sigmon, T.W.⁵

7
- 0029213639
- J. Boulmer, A. Desmur-Larré, C. Guedj, D. Débarre, P. Boucaud, F.H. Julien, E. Finkman, R. Lavai, J.-B. Ozenne, H. Yang, D. Bouchier, C. Godet, P. Roca i Cabarrocas, G. Calvarin and C. Clerc, Proc. SPIE 2403 (1995) 362.
- (1995) Proc. SPIE , vol.2403 , pp. 362
- Boulmer, J.¹ Desmur-Larré, A.² Guedj, C.³ Débarre, D.⁴ Boucaud, P.⁵ Julien, F.H.⁶ Finkman, E.⁷ Lavai, R.⁸ Ozenne, J.-B.⁹ Yang, H.¹⁰ Bouchier, D.¹¹ Godet, C.¹² Roca I Cabarrocas, P.¹³ Calvarin, G.¹⁴ Clerc, C.¹⁵

8
- 0001304143
- P. Roca i Cabarrocas, J.-B. Chévier, J. Hue et al., J. Vac. Sci. Technol. A 9 (1991) 2331.
- (1991) J. Vac. Sci. Technol. A , vol.9 , pp. 2331
- Roca I Cabarrocas, P.¹ Chévier, J.-B.² Hue, J.³

9
- 36749119332
- J. Appl. Phys.
- D.C. Joy, D.E. Newbury and D.L. Davidson, J. Appl. Phys. 53 No. 8 (1982) R81.
- (1982) , vol.53 , Issue.8
- Joy, D.C.¹ Newbury, D.E.² Davidson, D.L.³

10
- 0029633695
- J. Boulmer, P. Boucaud, C. Guedj et al., J. Cryst. Growth 157 (1995) 436.
- (1995) J. Cryst. Growth , vol.157 , pp. 436
- Boulmer, J.¹ Boucaud, P.² Guedj, C.³

11
- 0041575898
- submitted
- C. Guedj, D. Bouchier, P. Boucaud, G. Hincelin, X. Portier, A. L'Hoir, S. Bodnar and J.-L. Regolini, Mater. Sci. Eng. B, submitted (1995).
- (1995) Mater. Sci. Eng. B
- Guedj, C.¹ Bouchier, D.² Boucaud, P.³ Hincelin, G.⁴ Portier, X.⁵ L'Hoir, A.⁶ Bodnar, S.⁷ Regolini, J.-L.⁸

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