Nanometre scale reactive ion etching of GaN epilayers

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1403-1406

  Coquillat, D ^a,b   Murad, S K ^a   Ribayrol, A ^a   Smith, C J M ^a   De La Rue, R M ^a   Wilkinson, C D W ^a   Briot, O ^b   Aulombard, R L ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

CH4; CHF3; GaN; PMMA; Reactive Ion Etching; SiCl4; SiNx; Ti

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MULTILAYERS; NITRIDES; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTOR GROWTH; SILICON NITRIDE; TITANIUM;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 11644291066     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1403     Document Type: Article

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