Migration of di- and tri-interstitials in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 228, Issue 1-4 SPEC. ISS., 2005, Pages 212-217

  Posselt, M ^a   Gao, F ^b   Zwicker, D ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Computer simulations; Defects; Diffusion; Silicon

Indexed keywords

ATOMIC DIFFUSION; CASCADE REGIONS; SELF-DIFFUSION COEFFICIENTS; TRI-INTERSITIALS;

ANNEALING; COMPUTATIONAL METHODS; DEFECTS; DIFFUSION; ION IMPLANTATION; LOW TEMPERATURE EFFECTS; SILICON;

RADIATION DAMAGE;

EID: 11444263507     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.10.046     Document Type: Conference Paper

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