Fabrication of a novel strained SiGe: C-channel planar 55nm nMOSFET for high-performance CMOS

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 92-93

  Ernst, T ^a   Hartmann, J M ^a   Loup, V ^a   Ducroquet, F ^a   Dollfus, P ^a   Guegan, G ^a   Lafond, D ^a   Holliger, P ^a   Previtali B ^a   Toffoli, A ^a   Deleonibus, S ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIFFUSION; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; FABRICATION; OXIDATION; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; STRAIN;

OXIDATION ENHANCED DIFFUSION (OED);

MOSFET DEVICES;

EID: 0036049042     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)