On the negative Hubbard correlation energy of the DX center in In-doped CdMnTe

Journal of Applied Physics

Volumn 95, Issue 3, 2004, Pages 1171-1179

  Placzek Popko, E ^a   Szatkowski, J ^a   Becla, P ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRONS; ENERGY GAP; GROUND STATE; PHONONS; PHOTOCONDUCTIVITY; PHOTOELECTRICITY; PHOTOIONIZATION; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING;

HUBBARD CORRELATION ENERGY; OPTICAL IONIZATION ENERGY; PHOTOCAPACITANCE; PHOTOEFFECTS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 1142293804     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1638891     Document Type: Article

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