Persistent photoconductivity and DLTS in indium-doped Cd0.9Mn0.1Te

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 879-882

  Szatkowski, J ^a   Placzek Popko, E ^a   Sieranski, K ^a   Fialkowski, J ^a   Wrobel, J M ^b   Becla, P ^c  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF MISSOURI KANSAS CITY   (United States)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; PHOTOCONDUCTIVITY; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING;

CAPTURE CROSS SECTIONS; ENERGY BARRIERS; SHALLOW LEVELS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0033357825     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00539-6     Document Type: Article

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