Cd0.8Mn0.2Te:(In/Al) - deep level transient spectroscopy

Physica B: Condensed Matter

Volumn 292, Issue 1-2, 2000, Pages 114-116

  Szatkowski, J ^a   Placzek Popko, E ^a   Fialkowski, J ^a   Sieranski, K ^a   Hajdusianek, A ^a   Wrobel, J M ^b   Becla, P ^c  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF MISSOURI KANSAS CITY   (United States)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; BINDING ENERGY; COMPOSITION EFFECTS; ELECTRON TRAPS; INDIUM; PHOTOCHEMICAL REACTIONS; POINT DEFECTS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DOPING;

CADMIUM MANGANESE TELLURIDE; PERSISTENT PHOTOEFFECTS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 0034596674     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(00)00484-1     Document Type: Article

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