DX centers in indium-doped Cd0.9Mn0.1Te

Optical Materials

Volumn 18, Issue 1, 2001, Pages 163-165

  Placzek Popko E ^a   Szatkowski, J ^a   Sieranski K ^a   Fialkowski J ^a   Wrobel J M ^b   Becla, P ^c  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF MISSOURI KANSAS CITY   (United States)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

CdMnTe; Deep levels; DX centers

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DOPING (ADDITIVES); ELECTRON TRAPS; LOW TEMPERATURE EFFECTS;

METASTABLE STATES;

CADMIUM COMPOUNDS;

EID: 0035477324     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(01)00158-6     Document Type: Article

References (4)