Investigation of the electron mobility in strained Si1-xGex at high Ge composition

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 29-32

  Smirnov, S ^a   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Capacitive sensors; Conducting materials; Effective mass; Electron mobility; Germanium alloys; Germanium silicon alloys; Monte Carlo methods; Scattering; Silicon germanium; Tensile stress

Indexed keywords

BICMOS TECHNOLOGY; CAPACITIVE SENSORS; ELECTRON MOBILITY; GERMANIUM; INTELLIGENT SYSTEMS; MONTE CARLO METHODS; SCATTERING; SEMICONDUCTOR DEVICES; SILICON ALLOYS; TENSILE STRESS;

CONDUCTING MATERIALS; EFFECTIVE MASS; GERMANIUM SILICON ALLOY; IONIZED IMPURITY SCATTERING; LINEAR DEFORMATIONS; SIGE SUBSTRATES; SILICON GERMANIUM; UNI-AXIAL STRAINS;

GERMANIUM ALLOYS;

EID: 33646209983     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034509     Document Type: Conference Paper

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