Temperature effect as an essential factor in scanning tunneling microscopy studies demonstrated by the analysis of an oxygen-adsorbed Si(111)-7 X 7 surface [50]

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 16, 2004, Pages 1-4

  Konishi, Yasuaki ^a   Yoshida, Shoji ^a   Sainoo, Yasuyuki ^a,b   Takeuchi, Osamu ^a   Shigekawa, Hidemi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SILICON;

ADSORPTION KINETICS; ARTICLE; GAS DIFFUSION; IMAGE ANALYSIS; MICROSCOPE IMAGE; SCANNING TUNNELING MICROSCOPY; SURFACE PROPERTY; TEMPERATURE SENSITIVITY;

EID: 11344291172     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.165302     Document Type: Article

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