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Volumn 528, Issue 1-3, 2003, Pages 132-137
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Variable temperature STM studies of the adsorption of oxygen on the Si(1 1 1)- 7 × 7 surface
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Author keywords
Adsorption kinetics; Oxidation; Scanning tunneling microscopy; Semiconducting surfaces; Silicon
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Indexed keywords
OXIDATION;
OXYGEN;
SCANNING TUNNELING MICROSCOPY;
SILICON;
THERMAL EFFECTS;
PRECURSORS;
GAS ADSORPTION;
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EID: 0037457361
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(02)02622-5 Document Type: Conference Paper |
Times cited : (28)
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References (20)
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